1/2 - Watt HFET

Product Description The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface-mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while pro

文件：517.26 Kbytes 页数：12 Pages

WJCI

쩍-Watt HFET

Product Description The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface-mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while pro

文件：387.91 Kbytes 页数：11 Pages

WJCI

1/2 - Watt HFET

Product Description The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface-mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while pro

文件：517.26 Kbytes 页数：12 Pages

WJCI

GENERAL PURPOSE TRANSISTOR

文件：301.33 Kbytes 页数：4 Pages

HOTTECH

合科泰

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 32A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V APPLICATIONS · Unidirectional · Bidirectional DC-DC converters · On-Board battery Chargers

文件：398.92 Kbytes 页数：2 Pages

ISC

无锡固电