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FP1189-G

1/2 - Watt HFET

ProductDescription TheFP1189isahighperformance½-WattHFET(HeterostructureFET)inalow-costSOT-89surface-mountpackage.Thisdeviceworksoptimallyatadrainbiasof+8Vand125mAtoachieve+40dBmoutputIP3performanceandanoutputpowerof+27dBmat1-dBcompression,whilepro

WJCI

WJ Communication. Inc.

FP1189-G

쩍-Watt HFET

ProductDescription TheFP1189isahighperformance½-WattHFET(HeterostructureFET)inalow-costSOT-89surface-mountpackage.Thisdeviceworksoptimallyatadrainbiasof+8Vand125mAtoachieve+40dBmoutputIP3performanceandanoutputpowerof+27dBmat1-dBcompression,whilepro

WJCI

WJ Communication. Inc.

FP1189-RFID

1/2-WattHFET

ProductDescription TheFP1189isahighperformance½-WattHFET(HeterostructureFET)inalow-costSOT-89surface-mountpackage.Thisdeviceworksoptimallyatadrainbiasof+8Vand125mAtoachieve+40dBmoutputIP3performanceandanoutputpowerof+27dBmat1-dBcompression,whilepro

WJCI

WJ Communication. Inc.

HEB1189

GENERALPURPOSETRANSISTOR

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

ISF1189

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V APPLICATIONS ·Unidirectional ·BidirectionalDC-DCconverters ·On-BoardbatteryChargers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

LT1189

LowPowerVideoDifferenceAmplifier

LINERLinear Technology

凌力尔特凌特半导体

LT1189

LowPowerVideoDifferenceAmplifier

LINERLinear Technology

凌力尔特凌特半导体

LT1189

LowPowerVideoDifferenceAmplifier

FEATURES APPLICATIONS nnDifferentialorSingle-EndedGainBlock(Adjustable) nn–3dBBandwidth,AV=±2:50MHz nnSlewRate:165V/μs nnLowSupplyCurrent:13mA nnOutputCurrent:±20mA nnCMRRat10MHz:40dB nnLT1193PinCompatible nnLowCost nnSingle5VOperation nnDrivesCables

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

LT1189C

LowPowerVideoDifferenceAmplifier

LINERLinear Technology

凌力尔特凌特半导体

LT1189M

LowPowerVideoDifferenceAmplifier

LINERLinear Technology

凌力尔特凌特半导体

详细参数

  • 型号:

    FP1189-G

  • 功能描述:

    射频JFET晶体管 50-4000MHz +27dBm P1dB

  • RoHS:

  • 制造商:

    NXP Semiconductors

  • 配置:

    Single

  • 晶体管极性:

    N-Channel 正向跨导

  • gFS(最大值/最小值):

    电阻汲极/源极

  • RDS(导通):

    漏源电压

  • VDS:

    40 V

  • 闸/源截止电压:

    5 V

  • 闸/源击穿电压:

    40 V

  • 最大漏极/栅极电压:

    40 V 漏极电流(Vgs=0 时的

  • Idss):

    25 mA to 75 mA

  • 功率耗散:

    250 mW

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOT-23

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
TRIQUINT
17+
SOT89
6200
100%原装正品现货
询价
WJ
23+
SOT89
7750
全新原装优势
询价
2017+
SMD
1585
只做原装正品假一赔十!
询价
WJ
24+
SOT-89
1450
只做原装正品
询价
WJ
23+
SOT89
8560
受权代理!全新原装现货特价热卖!
询价
WJ
18+
SOT-89
85600
保证进口原装可开17%增值税发票
询价
WJ
15+
SOT-89
6698
询价
TriQuint
16+
NA
3000
全新进口原装
询价
WJ
19+
SOT89
16200
原装正品,现货特价
询价
WJ
20+
SOT89
49000
原装优势主营型号-可开原型号增税票
询价
更多FP1189-G供应商 更新时间2025-5-22 16:00:00