FP1189-G中文资料WJCI数据手册PDF规格书

Product Description

The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface-mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz.

Product Features

• 50 – 4000 MHz

• +27 dBm P1dB

• +40 dBm Output IP3

• High Drain Efficiency

• 20.5 dB Gain @ 900 MHz

• Lead-free/Green/RoHS compliant SOT-89 Package

• MTTF >100 Years

Applications

• Mobile Infrastructure

• CATV / DBS

• W-LAN / ISM

• RFID

• Defense / Homeland Security

• Fixed Wireless