FN1006D5

N-Channel Enhancement MOSFET

Features VDS=100V,ID=100A RDS(ON)=5.3mΩ@VGS=10V(typ.) HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

FN1006P

N-Channel Enhancement MOSFET

Features VDS=100V,ID=120A RDS(ON)=5.0mΩ@VGS=10V(typ.) HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

FN1018G

N-Channel Enhancement MOSFET

Features VDS=100V,ID=40A RDS(ON)=14mΩ@VGS=10V HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

FN1302A

N-Channel Enhancement MOSFET

Features VDS=30V,ID=075A RDS(ON)=330mΩ@VGS=10V RDS(ON)=360mΩ@VGS=4.5V HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

FN1503D3

N-Channel Enhancement MOSFET

Features VDS=30V,ID=30A RDS(ON)=12mΩ@VGS=10V(Typ.) RDS(ON)=20mΩ@VGS=4.5V(Typ.) HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

FN1560G

N-Channel Enhancement MOSFET

Features VDS=150V,ID=20A RDS(ON)=45mΩ@VGS=10V(Typ.) HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

FN1A3Q

MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD?

MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPEPNPTRANSISTORMINIMOLD FEATURES •ResistorsBuilt-inTYPE •ComplementarytoFA1A3Q

FN1A4M

MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD?

FN1A4M

SILICON TRANSISTOR

FEATURES -ResistorsBuilt-inTYPE

FN1A4P

MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD?