N-Channel Enhancement MOSFET

Features  VDS=150V, ID=20A  RDS(ON)=45mΩ@VGS=10V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Main Applications  Battery Protection  Load Switch  Power Management

文件：265.2 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

ULTRAFAST RECTIFIERS 15 AMPERES 200-400-600 VOLTS

SWITCHMODE Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • H

文件：143.27 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DESCRIPTION The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • Full mold package with 4 circuits • 4 V driving is possible • Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A)

文件：38.92 Kbytes 页数：4 Pages

NEC

瑞萨

N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DESCRIPTION The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • Full mold package with 4 circuits • 4 V driving is possible • Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A)

文件：38.92 Kbytes 页数：4 Pages

NEC

瑞萨