FMI05N60E数据手册供应代理富士通FUJI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FMI05N60E	文件：575.86 Kbytes Page：5 Pages	N-CHANNEL SILICON POWER MOSFET 文件：575.86 Kbytes 页数：5 Pages	FUJI 富士通	FUJI
FMI05N60E	文件：300 bytes Page：1 Pages	功率MOSFET 600V-700V	FUJI 富士通	FUJI
MGS05N60D	文件：135.89 Kbytes Page：6 Pages	Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protecti 文件：135.89 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MMG05N60D	文件：138.49 Kbytes Page：6 Pages	Insulated Gate Bipolar Transistor 文件：138.49 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MMG05N60D	文件：135.03 Kbytes Page：6 Pages	POWERLUX IGBT This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protection Zener Diode • Industry Standard Package (SOT223) • High Speed Eoff: Typic 文件：135.03 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA

更多FMI05N60E供应商更新时间2026-4-18 14:02:00