isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：332.33 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFETFeatures

文件：580.87 Kbytes 页数：5 Pages

FUJI

富士通

功率MOSFET 600V-700V

FUJI

富士通

LightMOS Power Transistor

LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is

文件：330.78 Kbytes 页数：15 Pages

INFINEON

英飞凌

LightMOS Power Transistor

LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is

文件：330.78 Kbytes 页数：15 Pages

INFINEON

英飞凌

LightMOS Power Transistor

LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is

文件：330.78 Kbytes 页数：15 Pages

INFINEON

英飞凌