IRFM340

SimpleDriveRequirements

IRFN340

POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=0.55ohm,Id=10A)

RDS(on)0.55Ω ID10A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis

IRFN340

SimpleDriveRequirements

IRFN340SMD

N-CHANNELPOWERMOSFET

IRFP340

11A,400V,0.550Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

IRFP340

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=11A)

DESCRIPTION ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastS

IRFP340

PowerMOSFET

IRFP340

PowerMOSFET

IRFP340

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

IRFP340A

iscN-ChannelMOSFETTransistor