FM25V10-G集成电路（IC）的存储器规格书PDF中文资料

描述 Description

The FM25V10 is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories.

特性 Features

1M bit Ferroelectric Nonvolatile RAM

• Organized as 131,072 x 8 bits

• High Endurance 100 Trillion (1014) Read/Writes

• 10 Year Data Retention

• NoDelay™ Writes

• Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

• Up to 40 MHz Frequency

• Direct Hardware Replacement for Serial Flash

• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme

• Hardware Protection

• Software Protection

Device ID and Serial Number

• Device ID reads out Manufacturer ID & Part ID

• Unique Serial Number (FM25VN10)

Low Voltage, Low Power

• Low Voltage Operation 2.0V – 3.6V

• 90μA Standby Current (typ.)

• 5μA Sleep Mode Current (typ.)

Industry Standard Configurations

• Industrial Temperature -40 C to +85 C

• 8-pin “Green”/RoHS SOIC Package