首页 >FLM1011-8C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
10.70-11.70GHz8-WattInternallyMatchedPowerFET FEATURES •10.70–11.70GHzBandwidth •Input/OutputImpedanceMatchedto50Ohms •+39.0dBmOutputPowerat1dBCompression •6.0dBPowerGainat1dBCompression •30PowerAddedEfficiency •-46dBcIM3atPO=28.5dBmSCL •100TestedforDC,RF,andRTH | Excelics Excelics Semiconductor, Inc. | Excelics | ||
X,Ku-BandInternallyMatchedFET DESCRIPTION TheFLM1011-8FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES •HighOutputPower | EUDYNA Eudyna Devices Inc | EUDYNA | ||
8WX,Ku-BANDPOWERGaAsMESFET DESCRIPTION TheNEZ1011-8EandNEZ1414-8EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50Ωexternalcircuit.Toreducethermalresistancethedevic | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
GaAsMESFET DESCRIPTION TheNEZ1011-8EispowerGaAsFETwhichprovideshigh gain,highefficiencyandhighoutputpowerinKu-band. Theinternalinputandoutputmatchingenablesguaranteed performancetobeachievedwithonlya50Wexternal circuit. Toreducethermalresistance,thedevicehasaPHS | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MICROWAVEPOWERGaAsFET Theinformationcontainedhereinispresentedonlyasaguidefortheapplicationsofourproducts.NoresponsibilityisassumedbyTOSHIBAforanyinfringementsofpatentsorotherrightsofthethirdpartieswhichmayresultsfromitsuse,Nolicenseisgrantedbyimplicationorotherwiseunder | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MICROWAVEPOWERGaAsFET FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=39.5dBmat10.7GHzto11.7GHz ･HIGHGAIN G1dB=9.0dBat10.7GHzto11.7GHz ･LOWINTERMODULATIONDISTOTION IM3=-45dBcatPout=27.0dBm SingleCarrierLevel ･HERMETICALLYSEALEDPACKAGE | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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