FQI2N90

900VN-ChannelMOSFET

FQI2N90

900VN-ChannelMOSFET

Features •2.2A,900V,RDS(on)=7.2Ω@VGS=10V •Lowgatecharge(typical12nC) •LowCrss(typical5.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQP2N90

900VN-ChannelMOSFET

Features •2.2A,900V,RDS(on)=7.2Ω@VGS=10V •Lowgatecharge(typical12nC) •LowCrss(typical5.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQPF2N90

900VN-ChannelMOSFET

Features •1.4A,900V,RDS(on)=7.2Ω@VGS=10V •Lowgatecharge(typical12nC) •LowCrss(typical5.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQU2N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.7A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQU2N90

900VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FQU2N90

N-ChannelQFET짰MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FQU2N90

N-ChannelQFET짰MOSFET900V,1.7A,7.2廓

HFD2N90

N-ChannelMOSFETusesadvancedtrenchtechnology

HFD2N90

900VN-ChannelMOSFET