SWD100N03

N-channelMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON)

SWI100N03

N-Channel30-V(D-S)MOSFET

SWI100N03

N-channelMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON)

SWP100N03

N-channelMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON)

TF100N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features 30V,100A RDSON(typ)=2.9mΩ@VGS=10V RDSON(typ)=4.3mΩ@VGS=4.5V AdvancedTrenchTechnology ProvideExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired Application LoadSwitch PWMApplication Powermanagement 100UISTESTED! 100ΔVdsTEST

TF100N03M

N-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF100N03MusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching

UT100N03

100A,30VN-CHANNELPOWERMOSFET

DESCRIPTION TheUT100N03usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=5.3mΩ@VGS=10V *RDS(ON)=8.0mΩ@VGS=4.5V

UT100N03G-TND-R

N-CHANNELMOSFETARRAYFORSWITCHING

UT100N03L

N-Channel30-V(D-S)MOSFET

UT100N03L-TND-R

N-CHANNELMOSFETARRAYFORSWITCHING