丝印：FHX；Package：PowerDI123；1.0W SURFACE MOUNT POWER ZENER DIODE

文件：375.29 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：FHX；Package：SOD123FL；Silicon Planar Zener Diodes

文件：385.89 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：FHX；Package：SOD-123FL；Silicon Planar Zener Diodes

文件：336.37 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：FHX；Silicon Planar Zener Diodes

文件：502.33 Kbytes 页数：3 Pages

JUXING

广东钜兴电子

Low Noise HEMT

DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka

文件：155.21 Kbytes 页数：4 Pages

Fujitsu

富士通

Low Noise HEMT

DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka

文件：155.21 Kbytes 页数：4 Pages

Fujitsu

富士通

Low Noise HEMT

DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka

文件：155.21 Kbytes 页数：4 Pages

Fujitsu

富士通

Low Noise HEMT

DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka

文件：155.21 Kbytes 页数：4 Pages

Fujitsu

富士通

Low Noise HEMT

DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka

文件：155.21 Kbytes 页数：4 Pages

Fujitsu

富士通

Low Noise HEMT

DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leaka

文件：155.21 Kbytes 页数：4 Pages

Fujitsu

富士通