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FGHL75T65MQDT

Field-Stop Trench IGBT

FEATURES · Low Saturation Voltage:VCE(sat)=1.8V@IC= 75A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · High Voltage Auxiliaries

文件:311.05 Kbytes 页数:3 Pages

ISC

无锡固电

FGHL75T65MQDTL4

Field Stop Trench IGBT 650 V, 75 A

Field stop 4th generation mid speed IGBT technology Full current rated copack Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ I

文件:240.5 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

FGHL75T65MQD

Package:TO-247-3;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 650V 75A TO247

ONSEMI

安森美半导体

FGHL75T65MQDT

IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode

ON Semiconductor's series of field stop 4th generation IGBTs offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other hi performance power conversion applications. • Positive temperature co-efficient\n• Easy paralleling operation\n• Low Vce(sat)\n• Low conduction losses\n• Low Eon and Eoff\n• Low switching losses;

ONSEMI

安森美半导体

FGHL75T65MQDTL4

IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode

ON Semiconductor's series of field stop 4th generation IGBTs offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other hi performance power conversion applications. • Positive temperature co-efficient\n• Easy paralleling operation\n• Low Vce(sat)\n• Low conduction losses\n• Low Eon and Eoff\n• Low switching losses;

ONSEMI

安森美半导体

FGHL75T65MQDT

Package:TO-247-3;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:FS4 MID SPEED IGBT 650V 75A TO24

ONSEMI

安森美半导体

FGHL75T65MQDTL4

Package:TO-247-4;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:FS4 MID SPEED IGBT 650V 75A TO24

ONSEMI

安森美半导体

产品属性

  • 产品编号:

    FGHL75T65MQDT

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • IGBT 类型:

    沟槽型场截止

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    1.8V @ 15V,75A

  • 开关能量:

    2.35mJ(开),1.25mJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    24ns/118ns

  • 测试条件:

    400V,75A,4.7 欧姆,15V

  • 工作温度:

    -55°C ~ 175°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-247-3

  • 供应商器件封装:

    TO-247-3

  • 描述:

    FS4 MID SPEED IGBT 650V 75A TO24

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
24+
TO-247
928
原厂订货渠道,支持BOM配单一站式服务
询价
ON(安森美)
23+
TO-247-3LD
9123
公司只做原装正品,假一赔十
询价
ONSEMI
22+
SMD
2700
询价
ON
23+
7800
全新、原装
询价
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
ON
24+
TO-247-3LD
25000
ON全系列可订货
询价
24+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
询价
onsemi
25+
TO-247-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ON
24+
TO-247
5000
全新原装正品,现货销售
询价
ON(安森美)
24+
TO-247-3LD
10000
优势物料,支持实单
询价
更多FGHL75T65MQD供应商 更新时间2025-11-18 16:30:00