FGH60N60分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

FGH60N60属于分立半导体产品的晶体管-UGBT、MOSFET-单。由安森美半导体公司制造生产的FGH60N60晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

描述 Description

Using novel field stop IGBT technology, ON Semiconductor’s new

series of field stop 2nd generation IGBTs offer the optimum

performance for solar inverter, UPS, welder, telecom, ESS and PFC

applications where low conduction and switching losses are essential.

特性 Features

• Maximum Junction Temperature: TJ = 175°C

• Positive Temperature Co−efficient for easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A

• High Input Impedance

• Fast Switching: EOFF = 7.5 uJ/A

• Tightened Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, PFC, Telecom, ESS