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首页>FGD5T120SH>芯片详情
FGD5T120SH_ONSEMI/安森美半导体_1200 V, 5 A FS Trench IGBT盈慧通商城
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产品属性
- 类型
描述
- 型号
:FGD5T120SH
- Pb-free
:Pb
- Halide free
:H
- Status
:Active
- V(BR)CES Typ (V)
:1200
- IC Max (A)
:5
- VCE(sat) Typ (V)
:2.9
- VF Typ (V)
:-
- Eoff Typ (mJ)
:0.94
- Eon Typ (mJ)
:0.247
- Trr Typ (ns)
:-
- Irr Typ (A)
:-
- Gate Charge Typ (nC)
:6.7
- Short Circuit Withstand (µs)
:-
- EAS Typ (mJ)
:-
- PD Max (W)
:69
- Co-Packaged Diode
:No
- Package Type
:DPAK-3/TO-252-3
供应商
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