FF400R12KT3_E数据手册分立半导体产品的晶体管-IGBT-模块规格书PDF

描述 Description

The half-bridge 62 mm 1200 V, 400 A Common Emitter IGBT modules is the right choice for your design. This IGBT module is equipped with a fast TRENCHSTOP™ IGBT3 and Emitter Controlled diode. The 3-level phase leg configurations are possible in combination with a second 62 mm half-bridge module (e.g. FF400R12KT3).
This product is also available with Thermal Interface Material pre-applied:  FF400R12KT3P_E

特性 Features

• Superior solution for frequency controlled inverter drives
• UL/CSA Certification with UL1557 E83336
• Operating temperature up to 125°C (max 150°C)
• Optimized switching characteristic like softness and reduced switching losses
• Existing packages with higher current capability
• RoHS compliant

优势:
• Flexibility
• Optimal electrical performance
• Highest reliability

简介

FF400R12KT3_E属于分立半导体产品的晶体管-IGBT-模块。由制造生产的FF400R12KT3_E晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。