XHP™2 module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 3300 V - IDN = 1000 A / IDRM = 2000 A - Tvj,op = 175°C - Low switching losses - High current density - Low inductive design • Mechanical features - High power density - Package with CTI > 600 - High creepage and clearance distances - AlSiC base p

文件：692.72 Kbytes 页数：17 Pages

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CoolSiC ™ MOSFET 半桥模块 3.3 kV

• CoolSiC™ MOSFET3.3 kV\n• Integrated body diode\n• XHP™ 2 housing\n• .XT interconnection technology\n\n优势:\n• Energy efficiency\n• High power density\n• Enhanced lifetime\n ;

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XHP™2 module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 3300 V - IDN = 1000 A / IDRM = 2000 A - Tvj,op = 175°C - Low switching losses - High current density - Low inductive design • Mechanical features - High power density - Package with CTI > 600 - High creepage and clearance distances - AlSiC base p

文件：692.72 Kbytes 页数：17 Pages

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全新原装 质保一年

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上传：苏州银邦电子科技有限公司

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上传：深圳市卓凯越电子有限公司