FF2000UXTR33T2M1中文资料英飞凌数据手册PDF规格书

特性 Features

• Electrical features

- VDSS = 3300 V

- IDN = 1000 A / IDRM = 2000 A

- Tvj,op = 175°C

- Low switching losses

- High current density

- Low inductive design

• Mechanical features

- High power density

- Package with CTI > 600

- High creepage and clearance distances

- AlSiC base plate for increased thermal cycling capability

- AlN substrate with low thermal resistance