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MBRF30H60CTG

SWITCHMODE??PowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRF30H60CTG

SWITCHMODEPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRJ30H60CTG

SWITCHMODEPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

STGB30H60DF

600V,30Ahighspeedtrenchgatefield-stopIGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGB30H60DFB

Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHBseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGB30H60DFB

TrenchgateField-StopIGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STGB30H60DLFB

Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGB30H60DLLFBAG

Automotive-gradetrenchgatefield-stopIGBT,HBseries600V,30Ahighspeed

Features AEC-Q101qualified Maximumjunctiontemperature:TJ=175°C Logiclevelgatedrive Highspeedswitchingseries Minimizedtailcurrent VCE(sat)=1.7V(typ.)@IC=30A LowVFsoftrecoveryco-packageddiode Tightparametersdistribution Saferparalleling L

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGF30H60DF

600V,30Ahighspeedtrenchgatefield-stopIGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGO30H60DLLFBAG

Automotive-gradetrenchgatefield-stop,600V,30A,high-speedHBseriesIGBTinaTO‑LLpackage

Features •AEC-Q101qualified •Maximumjunctiontemperature:TJ=175°C •Logiclevelgatedrive •High-speedswitchingseries •Minimizedtailcurrent •VCE(sat)=1.6V(typ.)@IC=30A •LowVFsoft-recoveryco-packageddiode •Tightparameterdistribution •Saferparalleling •Lo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

供应商型号品牌批号封装库存备注价格
ST
22+
D2PAKTO-220AB
66900
原厂原装现货
询价
ST
24+
D2PAKTO-220AB
200000
原装进口正口,支持样品
询价
STMICROELECTRONICS
24+
con
35960
查现货到京北通宇商城
询价
ST
21+
D2PAKTO-220AB
23480
询价
ST
24+
D2PAKTO-220AB
16900
支持样品,原装现货,提供技术支持!
询价
ST
25+
D2PAKTO-220AB
16900
原装,请咨询
询价
STM
1809+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
TI
21+
D2PAK-3
10000
原装,品质保证,请来电咨询
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ST/意法
23+
TO220
50000
全新原装正品现货,支持订货
询价
更多FERD30H60C供应商 更新时间2025-5-23 8:41:00