首页 >FE-440>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Optocoupler,PgototriacOutput,LowInputCurrent DESCRIPTION TheIL440consistsofaGaAsinfraredemitteropticallycoupledtoasiliconplanartriacchipwithanon-zero crossingnetwork.Thetwosemiconductorsareassembledina6pindual-in-lineplasticpackage.TheIL440canhandlecurrentsupto100mARMS. FEATURES •400V | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Optocoupler,PhototriacOutput,LowInputCurrent | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-CHANNELPOWERMOSFETS FEATURES •LowBoston)athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolyslllcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvol | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
N-ChannelPowerMOSFETs,8A,450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A) ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever | IRF International Rectifier | IRF | ||
8A,500V,0.850Ohm,N-ChannelPowerMOSFET 8A,500V,0.850Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsare | Intersil Intersil Corporation | Intersil | ||
N-CHANNELPOWERMOSFETS FEATURES •LowBoston)athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolyslllcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvol | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
RepetitiveAvalancheRatings | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ●VGSRatedat±20V ●SiliconGateforFastSwitchingSpe | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP |
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