FDW254P中文资料仙童半导体数据手册PDF规格书

General Description

This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).

Features

• –9.2 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V RDS(ON) = 15 mΩ @ VGS = –2.5 V RDS(ON) = 21.5 mΩ @ VGS = –1.8 V

• Rds ratings for use with 1.8 V logic

• Low gate charge

• High performance trench technology for extremely low RDS(ON)

• Low profile TSSOP-8 package

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management