FDW2521C中文资料仙童半导体数据手册PDF规格书

General Description

This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• Q1: N-Channel

5.5 A, 20 V. RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V

• Q2: P-Channel

–3.8 A, 20 V. RDS(ON) = 43 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V

• High performance trench technology for extremely low RDS(ON)

• Low profile TSSOP-8 package

Applications

• DC/DC conversion

• Power management

• Load switch