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FQI2N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP2N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP2N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP2N60C

N-ChannelQFET®MOSFET600V,2A,4.7Ω

Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingFairchildSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP2N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF2N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF2N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance

KERSEMI

Kersemi Electronic Co., Ltd.

FQPF2N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF2N60C

N-ChannelQFET®MOSFET600V,2A,4.7Ω

Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingFairchildSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF2N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    FDU2N60C

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    N-Channel QFET?? MOSFET

供应商型号品牌批号封装库存备注价格
PANASONIC
24+
SMD
10000
原装正品 清库存低价出
询价
FAIRC
12+
TO-251(IPAK)
15000
全新原装,绝对正品,公司现货供应。
询价
仙童
06+
TO-251
5000
原装库存
询价
FAIRCHILD
24+
TO-251
8866
询价
FSC/ON
23+
原包装原封□□
1825
原装进口特价供应特价,原装元器件供应,支持开发样品更多详细咨询库存
询价
Fairchild/ON
22+
TO2513 Short Leads IPak TO251A
9000
原厂渠道,现货配单
询价
ON Semiconductor
2022+
TO-251-3 短引线,IPak,TO-251A
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
FAIRCHILD/仙童
2022+
TO-251(IPAK)
48000
只做原装,绝对原装,假一罚十
询价
FAIRCHILD
2023+环保现货
TO-251(IPAK)
20000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
Fairchild
23+
33500
询价
更多FDU2N60C供应商 更新时间2025-7-24 14:06:00