FQP2N60C中文资料仙童半导体数据手册PDF规格书
FQP2N60C规格书详情
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
特性 Features
• 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
• Low gate charge ( typical 8.5 nC)
• Low Crss ( typical 4.3 pF)
• Fast switching
• 100 avalanche tested
• Improved dv/dt capability
产品属性
- 型号：
FQP2N60C
- 功能描述：
MOSFET 600V N-Channel Advance Q-FET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
TO-220 |
18746 |
样件支持,可原厂排单订货! |
询价 | ||
onsemi(安森美) |
25+ |
TO-220 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
FSC |
2016+ |
TO-220 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
FAIRCHILD |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
ON/安森美 |
25+ |
SMD |
20000 |
原装 |
询价 | ||
FAIRCHILD |
24+ |
TO-220 |
551 |
全新原装环保 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
68 |
220 |
FAIRCHILD/仙童 |
8 |
92 |
询价 |
