FDPF2D3N10C中文资料N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，222A，2.3mΩ数据手册ONSEMI规格书

描述 Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

特性 Features

• Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A
• Power Density & Shielded Gate
• High Performance Trench Technology for Extremely Low RDS(on)
• High power density with Shielded gate technology
• Extremely Low Reverse Recovery Charge, Qrr
• Low Vds spike internal snubber function.
• Low Gate Charge, QG = 108nC ( Typ.)
• Low switching loss
• High Power and Current Handling Capability
• Low Qrr/Trr
• 100% UIL Tested
• Soft recovery performance
• RoHS Compliant
• Good EMI performance

应用 Application

• Synchronous Rectification for ATX / Server / Workstation / Telecom PSU /Adapter and Industrial Power Supplies.
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• Server
• Telecom
• Computing ( ATX, Workstation, Adapter, Industrial Power Supplies etc. )
• Motor Drive
• Uninterruptible Power Supplies