FDN336P中文资料PDF规格书
FDN336P规格书详情
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.
Features
• –1.3 A, –20 V. RDS(ON) = 0.20 Ω @ VGS = –4.5 V
RDS(ON) = 0.27 Ω @ VGS = –2.5 V
• Low gate charge (3.6 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30
higher power handling capability than SOT23 in
the same footprint
产品属性
- 型号:
FDN336P
- 功能描述:
MOSFET SSOT-3 P-CH -20V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
SOT-23(SOT-23-3) |
8800 |
公司只做原装正品 |
询价 | ||
FSC |
2016+ |
SOT23-3 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
Fairchild |
23+ |
SOT23 |
20000 |
全新原装假一赔十 |
询价 | ||
FAIRCHI |
2020+ |
N/A |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
FAS |
23+ |
6000 |
原装现货特价 |
询价 | |||
FAIRCHILD |
23+ |
SOT23 |
20000 |
原厂原装正品现货 |
询价 | ||
FCS |
23+ |
DIP-40 |
18000 |
询价 | |||
Fairchild/ON |
21+ |
TO2363 SC59 SOT233 |
13880 |
公司只售原装,支持实单 |
询价 | ||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
询价 |