订购数量 | 价格 |
---|---|
1+ |
FDMS3669S_ONSEMI/安森美半导体_MOSFET 30V Asymmetric Dual N-Channel Pwr Trench得捷芯城商城
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产品属性
- 类型
描述
- 型号
:FDMS3669S
- Pb-free
:Pb
- Halide free
:H
- Status
:Active
- Channel Polarity
:N-Channel
- Configuration
:Dual
- V(BR)DSS Min (V)
:30
- VGS Max (V)
:12
- VGS(th) Max (V)
:Q1: 2.7
- ID Max (A)
:Q1: 13.0
- PD Max (W)
:Q1:2.2
- RDS(on) Max @ VGS = 2.5 V(mΩ)
:-
- RDS(on) Max @ VGS = 4.5 V(mΩ)
:Q1: 14.5
- RDS(on) Max @ VGS = 10 V(mΩ)
:Q1: 10
- Qg Typ @ VGS = 4.5 V (nC)
:13
- Qg Typ @ VGS = 10 V (nC)
:12
- Ciss Typ (pF)
:1469
- Package Type
:PQFN-8
供应商
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