FDC6321C-TP说明书PDF资料库存现货台舟电子-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FDC6321C-TP	文件：1.10399 Mbytes Page：3 Pages	丝印：321P；Package：SOT23-6；N-Channel P-Channel Enhancement Mode MOSFET 文件：1.10399 Mbytes 页数：3 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC
FDG6321	文件：196.89 Kbytes Page：12 Pages	Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe 文件：196.89 Kbytes 页数：12 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDG6321C	文件：196.89 Kbytes Page：12 Pages	Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe 文件：196.89 Kbytes 页数：12 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDG6321C	文件：1.98106 Mbytes Page：9 Pages	N- and P- Channel 20 V (D-S) MOSFET 文件：1.98106 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI

更多FDC6321C-TP供应商更新时间2026-1-27 11:06:00