首页 >FDB6670ALMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
30VN-ChannelPowerTrench짰SyncFET? | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VN-ChannelPowerTrenchSyncFET GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6670ASincludesanintegratedSchottkyd | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VN-ChannelPowerTrenchSyncFET GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6670ASincludesanintegratedSchottkyd | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VN-ChannelPowerTrenchSyncFET GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6670SincludesanintegratedSchottkydi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel,LogicLevel,PowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS( | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VN-ChannelMOSFET Features ·RDS(ON)=8mW（VGS=10V） ·RDS(ON)=10mW（VGS=4.5V） ·Lowgatecharge ·FastSwitching ·Highperformancetrenchtechnologyforextremely lowRDS(ON) ·VDS(V)=-30V | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
30VN-ChannelPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel,LogicLevel,PowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS( | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=66A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
30VN-ChannelMOSFET Features ·RDS(ON)=8mW（VGS=10V） ·RDS(ON)=10mW（VGS=4.5V） ·Lowgatecharge ·FastSwitching ·Highperformancetrenchtechnologyforextremely lowRDS(ON) ·VDS(V)=-30V | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW |
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