150V NPN MEDIUM POWER TRANSISTOR IN SOT89

Features • BVCEO > 150V • IC = 1A High Continuous Current • Low Saturation Voltage VCE(sat)

文件：475.23 Kbytes 页数：6 Pages

DIODES

美台半导体

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 150V 1A SOT89-3

DIODES

美台半导体

NPN Silicon Epitaxial Planar Transistors

Features • Low Collector Emitter Saturation Voltage Applications • Low Loss Power Switching

文件：904.99 Kbytes 页数：5 Pages

HUIXIN

慧芯电子

Power High Performance Transistor

Features ● SOT23 NPN silicon planar medium

文件：36.39 Kbytes 页数：2 Pages

KEXIN

科信电子

SOT23 NPN SILICON PLANAR MEDIUM

Feature • BVCEO > 150V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 500mW Power Dissipation • hFE Characterised up to 1A for High Current Gain Hold Up • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note

文件：127.69 Kbytes 页数：2 Pages

DIODES

美台半导体