SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Features • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • hFE Characterized up to 2A for High Current Gain Hold-Up • Complementary PNP Type: FCX591 • Totally Lead-Free & Fully RoHS Compliant (Notes

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DIODES

美台半导体

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 1A SOT89-3

DIODES

美台半导体

三极管(BJT)

Techpublic

台舟电子

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

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MITSUBISHI

三菱电机

MOSFET N-Ch, Enhancement Mode High Speed Switch

MOSFET N–Ch, Enhancement Mode High Speed Switch

文件：22.86 Kbytes 页数：2 Pages

NTE

NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

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PHI

PHI