FCPF20N60.中文资料安森美半导体数据手册PDF规格书

特性 Features

• 650V @ TJ = 150°C

• Typ. RDS(on) = 150 mΩ

• Ultra Low Gate Charge (Typ. Qg = 75 nC )

• Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )

• 100% Avalanche Tested

Applications

• Solar Inverter

• AC-DC Power Supply

描述 Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.