FCPF190N60E中文资料仙童半导体数据手册PDF规格书

描述 Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the E part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.

特性 Features

• 650 V @ TJ = 150°C

• Typ. RDS(on) = 160 mΩ

• Ultra Low Gate Charge (Typ. Qg = 63 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 178 pF)

• 100 Avalanche Tested

• An Integrated Gate Resistor

• RoHS Compliant

Applications

• LCD / LED / PDP TV Lighting

• Solar Inverter

• AC-DC Power Supply