FCP600N65S3R0中文资料Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, TO-220数据手册ONSEMI规格书

描述 Description

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy-drive series helps manage EMI issues and allows for easier design implementation.

特性 Features

• 700 V @ TJ= 150 oC
• Higher system reliability at low temperature operation
• Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
• Low switching loss
• Ultra Low Gate Charge (Typ. Qg = 11 nC)
• Low switching loss
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 493 mΩ
• Internal Gate Resistance: 0.9 Ω

应用 Application

• Computing
• Consummer
• Industrial
• Notebook / Desktop computer / Game consol
• Telecom / Server
• LCD / LED TV
• LED Lighting / Ballast
• Adapter