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FCP11N60N

N-ChannelMOSFET600V,10.8A,0.299廓

Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP11N60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF11N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60

PFCPWMCombinationController

Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60

PowerFactorCorrectionConverterDesign

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60

SuperFET

GeneralDescription SuperFET™isanewgenerationofhighvoltageMOSFETsfromFairchildwithoutstandinglowon-resistanceandlowgatechargeperformance,aresultofproprietarytechnologyutilizingadvancedchargebalancemechanisms.Thisadvancedtechnologyhasbeentailoredtominimizecond

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60F

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60F

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF11N60-G

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60NT

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF11N60NT

N-ChannelMOSFET600V,10.8A,0.299廓

Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60T

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF11N60T

GeneralDescription

GeneralDescription SuperFET™is,Fairchild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowonresistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionlos

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMC11N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.79Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FMC11N60E

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社FUJI

FMI11N60E

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社FUJI

FMP11N60E

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社FUJI

FMV11N60E

N-CHANNELSILICONPOWERMOSFET

SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedura

FujiFUJI CORPORATION

株式会社FUJI

FMV11N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    FCP11N60_Q

  • 功能描述:

    MOSFET 600V 11A N-CH

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
仙童
06+
TO-220
5000
原装库存
询价
AUK
21+ROHS
TO-220F
90000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FAI
700
询价
FAIRCHILD
2017+
TO220
45248
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
FSC
1436+
TO-220
30000
绝对原装进口现货可开增值税发票
询价
FAIRCHIL
23+
TO220
9526
询价
FAIRCHILD
23+
TO-220
8600
全新原装现货
询价
FAIRCHILD
2016+
TO220
5562
只做进口原装现货!或订货!假一赔十!
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ONSemiconductor
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
更多FCP11N60_Q供应商 更新时间2024-5-22 10:48:00