Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

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IRF

PowerMOS transistors Avalanche energy rated

文件：41.63 Kbytes 页数：7 Pages

PHI

PHI

PowerMOS transistors Avalanche energy rated

文件：41.63 Kbytes 页数：7 Pages

PHI

PHI

PowerMOS transistors Avalanche energy rated

文件：102.87 Kbytes 页数：9 Pages

PHI

PHI