STS8208

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SurfaceMountPackage. ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●ESDProtected.

T8208

ATMInterconnect

Description TheCelXpresT8208deviceintegratesalloftherequiredfunctionalitytotransportATMcellsacrossabackplanearchitecturewithhigh-speedcelltrafficexceeding1.5Gbits/stoamaximumof32destinations.Themanagementofmultipleservicecategoriesandmonitoringofperformance

TA8208H

5.8WDUALAUDIOPOWERAMPLIFIER

TD8208

HighEfficiency1MHz,2AStepUpRegulator

TPC8208

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=38mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=6.3S(typ.) •Lowleakagecurrent:IDSS=10µA(ma

TPC8208

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

TPC8208

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCS8208

LithiumIonBatteryApplications

TPCS8208

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

LithiumIonBatteryApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=13mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=15S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=20V) •Enhancementmode:Vth=0.5~1.2V(VDS=

UP8208P

Li-Ion/Polymer2/3/4-CellSecondProtectionICVoltageRegulator