丝印：F730；Package：TO-220F；6A 400V N-channel Enhancement Mode Power MOSFET

文件：1.76217 Mbytes 页数：12 Pages

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Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th

文件：200.2 Kbytes 页数：12 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：134.99 Kbytes 页数：7 Pages

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文件：680.39 Kbytes 页数：4 Pages

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文件：680.39 Kbytes 页数：4 Pages

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文件：84.12 Kbytes 页数：2 Pages

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SAW Bandpass Filter F7371

文件：155.69 Kbytes 页数：7 Pages

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文件：84.12 Kbytes 页数：2 Pages

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丝印：F7303；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Ros(oN =35 mO@VGS=10V ® Ros =45 mO@VGS=4.5V ‘@ Super high density cell design for extremely low Ros(oN) ® Exceptional on-resistance and maximum DC curent capability

文件：2.19004 Mbytes 页数：5 Pages

TECHPUBLIC

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