F7338资料datasheet下载批发采购科信电子-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
F7338	文件：200.2 Kbytes Page：12 Pages	HEXFET Power MOSFET Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th 文件：200.2 Kbytes 页数：12 Pages	IRF	IRF
IRF7338	文件：200.2 Kbytes Page：12 Pages	HEXFET Power MOSFET Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th 文件：200.2 Kbytes 页数：12 Pages	IRF	IRF
IRF7338PBF	文件：224.51 Kbytes Page：12 Pages	HEXFET Power MOSFET 文件：224.51 Kbytes 页数：12 Pages	IRF	IRF
KRF7338	文件：64.61 Kbytes Page：3 Pages	HEXFET Power MOSFET 文件：64.61 Kbytes 页数：3 Pages	KEXIN 科信电子	KEXIN

更多F7338供应商更新时间2026-2-9 14:00:00