LDTD123YLT1G

Marking：F62；Package：SOT-23；Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

BiasResistorTransistor NPNSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork •Features 1)Built-inbiasresistorsenabletheconfigurationofan invertercircuitwithoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsist

LDTD123YLT3G

Marking：F62；Package：SOT-23；Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

BiasResistorTransistor NPNSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork •Features 1)Built-inbiasresistorsenabletheconfigurationofan invertercircuitwithoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsist

RT8016-25PQW

Marking：F6*；Package：WDFN-62x2；1.5MHz, 600mA, High Efficiency PWM Step-Down DC/DC Converter

GeneralDescription TheRT8016Lisahigh-efficiencyPulse-Width-Modulated(PWM)step-downDC/DCconvertercapableofdeliveringupto600mAoutputcurrentoverawideinputvoltagerangefrom2.5Vto5.5V.TheRT8016Lisideallysuitedforportableelectronicdevicesthatarepoweredfrom1-ce

RT8016-25PQW

Marking：F6*；Package：WDFN-62x2；1.5MHz, 1A, High Efficiency PWM Step-Down DC/DC Converter

GeneralDescription TheRT8016isahigh-efficiencyPulse-Width-Modulated(PWM)step-downDC-DCconverter.Capableofdelivering1Aoutputcurrentoverawideinputvoltagerangefrom2.5Vto5.5V,theRT8016isideallysuitedforportableelectronicdevicesthatarepoweredfrom1-cellLi-ion

S-LDTD123YLT1G

Marking：F62；Package：SOT-23；Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

BiasResistorTransistor NPNSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork •Features 1)Built-inbiasresistorsenabletheconfigurationofan invertercircuitwithoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsist

S-LDTD123YLT3G

Marking：F62；Package：SOT-23；Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

BiasResistorTransistor NPNSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork •Features 1)Built-inbiasresistorsenabletheconfigurationofan invertercircuitwithoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsist

SN74F657DW

Marking：F657；Package：SOIC；OCTAL TRANSCEIVER WITH PARITY GENERATOR/CHECKER AND 3-STATE OUTPUTS

•Combines4F245and4F280BFunctionsin OnePackage •High-ImpedanceN-P-NInputsforReduced Loading(70mAinLowandHighStates) •HighOutputDriveandLightBusLoading •3-StateBOutputsSink64mAandSource 15mA •InputDiodesforTerminationEffects •PackageOptionsIncludeP

SN74F657DW.A

Marking：F657；Package：SOIC；OCTAL TRANSCEIVER WITH PARITY GENERATOR/CHECKER AND 3-STATE OUTPUTS

•Combines4F245and4F280BFunctionsin OnePackage •High-ImpedanceN-P-NInputsforReduced Loading(70mAinLowandHighStates) •HighOutputDriveandLightBusLoading •3-StateBOutputsSink64mAandSource 15mA •InputDiodesforTerminationEffects •PackageOptionsIncludeP

STF6NK50Z

Marking：F6NK50Z；Package：TO-220FP；N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET

■TYPICALRDS(on)=0.93Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURING REPEATIBILITY DESCRIPTION TheSuperMESH™seriesisobtainedthroughan extremeoptimizationofST’swellestablishedst

DTD118

Marking：F62；Package：SOT-23；Digital transistors (built-in resistors)