丝印：F6；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：2.05751 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：F6；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：742.14 Kbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：F6；Package：MicroPak2；TinyLogic ULP-A 2-Input NOR Gate

The NC7SV02 is a single 2−Input NOR Gate in tiny footprint packages. The device is designed to operate for VCC = 0.9 V to 3.6 V. Features • Designed for 0.9 V to 3.6 V VCC Operation • 1.5 ns tPD at 3.3 V (Typ) • Inputs/Outputs Over−Voltage Tolerant up to 3.6 V • IOFF Supports Partial Power

文件：213.88 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：F6；Package：MicroPak；TinyLogic ULP-A 2-Input NOR Gate

The NC7SV02 is a single 2−Input NOR Gate in tiny footprint packages. The device is designed to operate for VCC = 0.9 V to 3.6 V. Features • Designed for 0.9 V to 3.6 V VCC Operation • 1.5 ns tPD at 3.3 V (Typ) • Inputs/Outputs Over−Voltage Tolerant up to 3.6 V • IOFF Supports Partial Power

文件：213.88 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：F6；Package：SOT-883；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Re

文件：93.83 Kbytes 页数：14 Pages

PHI

PHI

丝印：F6；Package：SOT-883；PNP resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：189.96 Kbytes 页数：14 Pages

恩XP

丝印：F6；Package：SOD-882；Schottky barrier single diodes

General description Planar Schottky barrier single diodes with an integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ Low forward voltage ■ Low capacitance Applications ■ Ultra high-speed switching ■ Voltage clamping

文件：71.3 Kbytes 页数：10 Pages

恩XP

丝印：F6；Package：SOT-363；Power management (dual transistors)

Power management (dual transistors) 2SA2018 and 2SK3019 are housed independently in a UMT package. Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. Application Power management circuit

文件：99.25 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：F6；Package：SSOP5A；Versatile Package FULL CMOS LDO Regulator

文件：1.0185 Mbytes 页数：15 Pages

ROHM

罗姆

丝印：F6；Package：SSOP5；Versatile Package FULL CMOS LDO Regulator

文件：483.72 Kbytes 页数：10 Pages

ROHM

罗姆