F630芯片代码芯片丝印反查-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
F630	文件：1.35377 Mbytes Page：11 Pages	丝印：F630；Package：TO-220F；9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso 文件：1.35377 Mbytes 页数：11 Pages	WXDH 东海半导体	WXDH
F630	文件：1.35377 Mbytes Page：11 Pages	丝印：F630；Package：TO-220F；9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso 文件：1.35377 Mbytes 页数：11 Pages	WXDH 东海半导体	WXDH

更多F630供应商更新时间2025-8-13 9:11:00