50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) drivi • 50A, 50V\n• UIS SOA Rating Curve (Single Pulse)\n• Can be Driven Directly from CMOS, NMOS, TTL Circuits\n• SOA is Power Dissipation Limited\n• Linear Transfer Characteristics\n• Majority Carrier Device\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount\n      Components to P;

Austin Semiconductor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：293.07 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS IV POWER FIELD EFFECT TRANSISTORS

文件：224.09 Kbytes 页数：6 Pages

Motorola

摩托罗拉

TMOS IV POWER FIELD EFFECT TRANSISTORS

文件：224.09 Kbytes 页数：6 Pages

Motorola

摩托罗拉