TMOS IV POWER FIELD EFFECT TRANSISTORS

文件：224.09 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

TMOS IV POWER FIELD EFFECT TRANSISTORS

恩XP

TMOS IV POWER FIELD EFFECT TRANSISTORS

文件：224.09 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.27 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60-V (D-S) MOSFET

文件：979.64 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate charge simpler dr

文件：215.37 Kbytes 页数：6 Pages

IRF