UPA1792

MOSFIELDEFFECTTRANSISTOR

FEATURES •Lowon-stateresistance N-channelRDS(on)1=26mΩMAX.(VGS=10V,ID=3.4A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=3.4A) RDS(on)3=42mΩMAX.(VGS=4.0V,ID=3.4A) P-channelRDS(on)1=36mΩMAX.(VGS=−10V,ID=−2.9A) RDS(on)2=54mΩMAX.(VGS=−4.5V,ID=−2.

UPA1792G

MOSFIELDEFFECTTRANSISTOR

FEATURES •Lowon-stateresistance N-channelRDS(on)1=26mΩMAX.(VGS=10V,ID=3.4A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=3.4A) RDS(on)3=42mΩMAX.(VGS=4.0V,ID=3.4A) P-channelRDS(on)1=36mΩMAX.(VGS=−10V,ID=−2.9A) RDS(on)2=54mΩMAX.(VGS=−4.5V,ID=−2.

UPA1792G

SWITCHINGN-ANDP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheµPA1792isN-andP-ChannelMOSFieldEffectTransistorsdesignedforMotorDriveapplicationofHDDandsoon. FEATURES •Lowon-resistance N-ChannelRDS(on)1=26mΩMAX.(VGS=10V,ID=3.4A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=3.4A)

VLL1792

UHFSPDTSwitch