AO6601

Marking：F14L；Package：SOT23-6；N P Channel MOSFET

Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V)

AO6601

Marking：F14LU；Package：SOT23-6；N P Channel MOSFET

GeneralDescription TheAO6601usesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.The complementaryMOSFETsformahigh-speedpower inverter,suitableforamultitudeofapplications. Features N-Ch: VDS(V)=30V RDS(ON)

F1478NLGA

Marking：F1478；Package：VFQFPN；High Gain RF Amplifier 1.8GHz to 5.0GHz

Features RFrange:1.8GHzto5.0GHz 30.3dBtypicalgainat3.55GHz 1.6dBNFat3.55GHz AdjustableOIP3performance +35.7dBmOIP3at3.55GHzand140mAofbiascurrent +32.2dBmOIP3at3.55GHzand100mAofbiascurrent AdjustableOP1dBperformance +23.6dBmOP1dBat3.55GHzand140mA

F1478NLGA8

Marking：F1478；Package：VFQFPN；High Gain RF Amplifier 1.8GHz to 5.0GHz

Features RFrange:1.8GHzto5.0GHz 30.3dBtypicalgainat3.55GHz 1.6dBNFat3.55GHz AdjustableOIP3performance +35.7dBmOIP3at3.55GHzand140mAofbiascurrent +32.2dBmOIP3at3.55GHzand100mAofbiascurrent AdjustableOP1dBperformance +23.6dBmOP1dBat3.55GHzand140mA