丝印：F1B；Surface Mount Fast Recovery Rectifiers

文件：1.15545 Mbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：F1B；Package：SOD123FL；Surface Mount Fast Recovery Rectifiers

文件：414.44 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：F1BF；Package：SMAF；Surface Mount Fast Recovery Rectifier F1AF Through F1MF

FEATURES Low profile package Ideal for automated placement Glass passivated chip junction High forward surge capability Fast reverse recovery time Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.66117 Mbytes 页数：3 Pages

RFE

RFE international

丝印：F1BFS；Package：SMAF；Surface Mount Fast Recovery Rectifier F1AFS Through F1MFS

FEATURES ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Fast reverse recovery time ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.57909 Mbytes 页数：3 Pages

RFE

RFE international

丝印：F1BF；Package：SMAF；Surface Mount Fast Recovery Rectifier F1AF Through F1MF

FEATURES Low profile package Ideal for automated placement Glass passivated chip junction High forward surge capability Fast reverse recovery time Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.66117 Mbytes 页数：3 Pages

RFE

RFE international

丝印：F1BFS；Package：SMAF；Surface Mount Fast Recovery Rectifier F1AFS Through F1MFS

FEATURES ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Fast reverse recovery time ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.57909 Mbytes 页数：3 Pages

RFE

RFE international

STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)

HIGH SPEED RECTIFIER APPLICATION. FEATURES Average Output Rectified Current : IO=10A(Tc=108°C ). Repetitive Peak Reverse Voltage : VRRM=200V. Rectifier Stack of Single Phase Center Tap Type.

文件：239.75 Kbytes 页数：2 Pages

KECKEC CORPORATION

KEC株式会社

STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)

HIGH SPEED RECTIFIER APPLICATION. FEATURES • Average Output Rectified Current : IO=10A(Tc=101°C). • Repetitive Peak Reverse Voltage : VRRM=200V. • Rectifier Stack of Single Phase Center Tap Type.

文件：246.08 Kbytes 页数：2 Pages

KECKEC CORPORATION

KEC株式会社

STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)

HIGH SPEED RECTIFIER APPLICATION. FEATURES Average Output Rectified Current : IO=10A(Tc=108°C ). Repetitive Peak Reverse Voltage : VRRM=200V. Rectifier Stack of Single Phase Center Tap Type.

文件：239.75 Kbytes 页数：2 Pages

KECKEC CORPORATION

KEC株式会社

STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)

HIGH SPEED RECTIFIER APPLICATION. FEATURES • Average Output Rectified Current : IO=10A(Tc=101°C). • Repetitive Peak Reverse Voltage : VRRM=200V. • Rectifier Stack of Single Phase Center Tap Type.

文件：246.08 Kbytes 页数：2 Pages

KECKEC CORPORATION

KEC株式会社