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F1102

RF to IF Dual Downconverting Mixer

FEATURES •DualPathforDiversitySystems •IdealforMulti-CarrierSystems •MIMOfriendly:-6dBmminLOdrive •9dBGain •Ultralinear:+41dBmIP3O(350MHzIF) •LowNF~10dB •200@outputimpedance •Ultrahigh+13dBmP1dBI •PinCompatiblew/Existingsolutions •6x636pinp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F1102

RF to IF Dual Downconverting Mixer

FEATURES •DualPathforDiversitySystems •IdealforMulti-CarrierSystems •8.5dBGain(200MHzIF) •Ultralinear+38dBmIP3O(350MHzIF) •Ultralinear+40dBmIP3O(200MHzIF) •LowNF

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F1107

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

Polyfet

Polyfet RF Devices

F1108

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfet™processfeaturesgoldmetalforgreatlyextendedlifetim

Polyfet

Polyfet RF Devices

F1116

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

Polyfet

Polyfet RF Devices

F1120

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

Polyfet

Polyfet RF Devices

F1129HB

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F1129LB

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F1129MB

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F1129MBEVB

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    F11

  • 制造商:

    Kaise

  • 功能描述:

    Bulk

供应商型号品牌批号封装库存备注价格
原装nichicon
19+
QFN
20000
询价
原装nichicon
24+
QFN
63200
一级代理/放心采购
询价
原装nichicon
23+
QFN
7300
专注配单,只做原装进口现货
询价
原装nichicon
23+
QFN
7300
专注配单,只做原装进口现货
询价
ST
10+
ZIP-15
7800
全新原装正品,现货销售
询价
TI
25+
QFP
4860
品牌专业分销商,可以零售
询价
FOX
24+/25+
239
原装正品现货库存价优
询价
XILINX
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
XILINX
23+
SOP
5000
原装正品,假一罚十
询价
TI
24+
QFP-M100P
1280
询价
更多F11供应商 更新时间2025-7-26 15:14:00