PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：36.42 Kbytes 页数：2 Pages

POLYFET

HelioProtection® HP15NH Photovoltaic fuse-links gPV 1500VDC

FEATURES & BENEFITS • Global acceptance • Low fault current interrupting capability • Temperature cycle withstand capability • Durable construction for enhanced system longevity • High efficiency with low power losses • Available in 3 versions: plain blade, direct mounted, direct mounted wit

文件：2.62155 Mbytes 页数：18 Pages

MERSEN

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Silicon Carbide Schottky Diode

文件：297.68 Kbytes 页数：6 Pages

ONSEMI

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Silicon Carbide Schottky Diode 650 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：299.15 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide Schottky Diode

文件：356.38 Kbytes 页数：7 Pages

ONSEMI

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