PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

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POLYFET

Precision F Male to F Male Adapter

Features: • VSWR of 1.17:1 max up to 3 GHz • Gold Plated Brass Contact

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FAIRVIEW

2.5 dB NF Low Noise Amplifier, Operating from 100 MHz to 2 GHz with 61.5 dB Gain, 21 dBm Psat and SMA

Features: • 100 MHz to 2000 MHz Frequency Range • Low Noise Figure: 2.5 dB • High Dynamic Range • Efficient GaAs pHEMT Design • Small Signal Gain: 61.5 dB • Output P1dB: +19 dBm • Output IP3: +33 dBm • Operating Temperature: -40°C to +85°C • 50 Ohm Input and Output Matched • DC Power

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FAIRVIEW

EMI/EMC FILTER

Features - Ideally suited for products that must conform to part 15, FCC regulations - Metal cased miniature type with high performance - Meet over voltage category II of IEC 60664 and comply with [EC 60950 - Uses IEC connector that meets the safety standards from certification bodies - Bo

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DIT